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| Datasheet File OCR Text: |
| PROCESS CP285 Power Transistor NPN - Silicon Power Transistor Chip Central TM Semiconductor Corp. PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 105 x 105 MILS 9.5 MILS 32 x 22 MILS 33 x 24 MILS Al - 45,000A Ti/Ni/Ag - (3000A, 10,000A, 10,000A) GEOMETRY GROSS DIE PER 5 INCH WAFER 1,486 PRINCIPAL DEVICE TYPES MJE13005 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (20-January 2006) |
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